Investigation of Hybrid Tunnel Junction Architectures for III-V/Si Tandem Solar Cells
| Autor: | Hamon, Gwenaelle, Cariou, Romain, Lachaume, Raphaël, Decobert, Jean, Louarn, Kevin, Chen, Wanghua, Alvarez, J, Kleider, Jean-Paul, Cabarrocas, Pere Roca I. |
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| Přispěvatelé: | Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
0303 health sciences
03 medical and health sciences 0302 clinical medicine New Materials and Concepts for cells [SPI.NRJ]Engineering Sciences [physics]/Electric power NEW MATERIALS AND CONCEPTS FOR SOLAR CELLS AND MODULES [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 7. Clean energy 030217 neurology & neurosurgery [SPI.MAT]Engineering Sciences [physics]/Materials 030304 developmental biology |
| Zdroj: | 31st European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC 2015) 31st European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC 2015), Sep 2015, Hamburg, Germany. pp.75-79, ⟨10.4229/EUPVSEC20152015-1CO.10.4⟩ |
| DOI: | 10.4229/eupvsec20152015-1co.10.4 |
| Popis: | 31st European Photovoltaic Solar Energy Conference and Exhibition; 75-79 We fabricated n-Si/p-GaAs and p-Si/n-GaAs junctions, by combining low temperature (under 200°C) RFPECVD for Si and MOVPE for GaAs. In particular, we focused on low-resistance Si/GaAs tunnel junctions (< 1 mΩ.cm2) suitable for the interconnection of two subcells in tandem III-V/Si solar cells. We first demonstrate the growth of highly doped epitaxial silicon films on GaAs despite the 4% lattice-match between these two materials. Spectroscopic ellipsometry measurements were used to confirm the quality of the epitaxial Si layers. The electrical properties of the grown junctions were measured based on four-point probes method and analyzed using TCAD simulations on Silvaco. We demonstrate a very low resistance for the p-Si/n-GaAs junction, down to 3.10-5 .cm2, with current densities above 10.000 A/cm2, suitable for ultra-high concentration photovoltaics, largely exceeding the requirement for our low concentration targeted conditions (below 20 suns). |
| Databáze: | OpenAIRE |
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