Characterization of deep level traps responsible for isolation of proton implanted GaAs
| Autor: | Artur Vicente Pfeifer Coelho, C. Jagadish, Hoe Hark Tan, Henri Ivanov Boudinov |
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| Rok vydání: | 2003 |
| Předmět: |
congenital
hereditary and neonatal diseases and abnormalities Materials science Deep-level transient spectroscopy Deep level Annealing (metallurgy) business.industry Analytical chemistry nutritional and metabolic diseases General Physics and Astronomy Semicondutores iii-v Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Ion bombardment Níveis profundos Gallium arsenide Implantacao ionica Condensed Matter::Materials Science chemistry.chemical_compound Ion implantation Semiconductor chemistry Estabilidade térmica Thermal stability business |
| Zdroj: | Repositório Institucional da UFRGS Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1554761 |
| Popis: | Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250 °C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ∼0.64 eV. |
| Databáze: | OpenAIRE |
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