Observation and origin of the Δ manifold in Si:P δ layers
| Autor: | Davide Curcio, Ann Julie Holt, Frode S. Strand, Jill A. Miwa, Thomas Nyborg, Justin W. Wells, Philip Hofmann, Raluca Maria Stan, Sanjoy K. Mahatha, Alex Schenk, S. P. Cooil, Marco Bianchi |
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| Rok vydání: | 2020 |
| Předmět: |
Physics
Condensed matter physics Silicon Dopant Photoemission spectroscopy chemistry.chemical_element Quantum well states 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Condensed Matter::Materials Science chemistry law Quantum dot 0103 physical sciences 010306 general physics 0210 nano-technology Fermi gas Manifold (fluid mechanics) |
| Zdroj: | Holt, A J, Mahatha, S K, Stan, R M, Strand, F S, Nyborg, T, Curcio, D, Schenk, A K, Cooil, S P, Bianchi, M, Wells, J W, Hofmann, P & Miwa, J A 2020, ' Observation and origin of the Δ manifold in Si:P δ layers ', Physical Review B, vol. 101, no. 12, 121402 . https://doi.org/10.1103/PhysRevB.101.121402 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.101.121402 |
| Popis: | By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$ to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $\mathrm{\ensuremath{\Delta}}$ manifold is revealed. Moreover, the number of carriers hosted within the $\mathrm{\ensuremath{\Delta}}$ manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness. |
| Databáze: | OpenAIRE |
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