Ultra wide band power amplifier using GaN on SI HEMT device
| Autor: | Rocco Giofre, Franco Giannini, Antonio Nanni, D. Pistoia, Claudio Lanzieri, Paolo Colantonio, A. Pantellini |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Power Amplifier
Materials science business.industry Amplifier RF power amplifier Electrical engineering Wide-bandgap semiconductor Ultra-wideband Ultra-wide band Gain compression High-electron-mobility transistor Settore ING-INF/01 - Elettronica GaN Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Scattering parameters Optoelectronics Power Amplifier GaN PA Ultra-wide band Hybrid power business PA |
| Popis: | This contribution describes the design of an ultra wide band hybrid power amplifier for applications in the frequency range from 1 GHz to 6 GHz. The amplifier is designed with a GaN-on-Si HEMT device provided by SELEX-SI, in a single ended configuration and using the source/load-pull and Scattering parameters measured data. The amplifier has been designed using a CAD oriented broad band matching approach for both input and output networks. From 1 GHz to 6 GHz, the expected output power at 3dB of gain compression is around 41 dBm. |
| Databáze: | OpenAIRE |
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