Influence of preparation conditions on electrical properties of the Al/Alq3/Si diode structures
| Autor: | Kristina Šliužienė, A. Maneikis, Gražina Grigaliūnaitė Vonsevičienė, Irina Černiukė, Bonifacas Vengalis, V. Lisauskas |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
lcsh:TN1-997
Spin coating Materials science Alq3 thin film Equivalent series resistance business.industry chemistry.chemical_element Schottky thermionic emission Space charge Dipole chemistry Aluminium Optoelectronics Scopus Science Citation Index Expanded (Web of Science) General Materials Science Thin film Organic-inorganic heterostructures business Layer (electronics) lcsh:Mining engineering. Metallurgy Vapour deposition Diode |
| Zdroj: | Medžiagotyra, Vol 19, Iss 4, Pp 363-366 (2013) |
| Popis: | Hybrid organic-inorganic diode structures, Al/Alq3/n-Si and Al/Alq3/p-Si based on thin films of tris(8-hydroxyquinoline) aluminum (Alq3) have been investigated. The Alq3 films were evaporated in vacuum and spin coated onto patterned areas of crystalline n- and p-type Si substrates with chemically removed native SiO2 layer. Current-voltage characteristics of the diode structures demonstrated improved rectification property compared to similar Al/n-Si and Al/p-Si device structures. Increased barrier height values (0.90 eV ÷ 1.1 eV and 0.77 eV ÷ 0.91 eV for the Al/Alq3/n-Si and Al/Alq3/p-Si device structures, respectively) certified presence of an interface dipole induced by the organic interlayer. Non-ideal behavior of forward current-voltage characteristics has been explained assuming non-uniformity of barrier height, presence of interface states, and influence of the organic film on diode series resistance and space charge limited current. DOI: http://dx.doi.org/10.5755/j01.ms.19.4.2733 |
| Databáze: | OpenAIRE |
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