ISSUES, ACHIEVEMENTS AND CHALLENGES TOWARDS INTEGRATION OF HIGH-k DIELECTRICS
| Autor: | Guido Groeseneken, Eduard A. Cartier, Y. Manabe, Matty Caymax, S. E. Jang, A. Kerber, G. Lujan, Marc Heyns, Chao Zhao, Thierry Conard, S. Lin, J.D. Chen, Vidya Kaushik, Hugo Bender, E. Young, Wilfried Vandervorst, Robin Degraeve, J. Kluth, L. Pantisano, V. Cosnier, Wilman Tsai, S. Van Elshocht, E. Rohr, S. De Gendt, Richard Carter, S. Kubicek, J. Pétry |
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| Rok vydání: | 2003 |
| Předmět: |
Electron mobility
Materials science Gate dielectric Nanotechnology Dielectric Engineering physics Electronic Optical and Magnetic Materials Reliability (semiconductor) Material selection CMOS Hardware and Architecture Gate oxide Electrical and Electronic Engineering Quantum tunnelling High-κ dielectric Leakage (electronics) |
| Zdroj: | Frontiers in Electronics. |
| Popis: | Once the thickness of the gate dielectric layer in CMOS devices gets thinner than 1.2 nm, excessive gate leakage due to direct tunneling makes the use of alternative materials obligatory. Candidate high-k materials are metal oxides such as Al 2 O 3, ZrO 2 and HfO 2 as well as their mixtures. Very promising results have been reported world-wide. Here, however, we show that there are a number of issues related to materials and electrical characteristics as well as to processing which are not always recognized and that necessitate more work to find solutions. Among these are problems with density, interface layer growth and island formation which are clearly related to the deposition process. Also thermal instabilities as well as interactions between the high-k material and poly-Si need attention. Further possible show-stoppers are electrical reliability issues and strongly reduced carrier mobility. |
| Databáze: | OpenAIRE |
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