On the Operational, shelf life and degradation mechanism in polymer field effect transistors
| Autor: | Saira Riaz, M. Zahir Iqbal, Hamna Haq, Mujeeb Ullah Chaudhry, M. Akram Raza, M. Javaid Iqbal, Shahzad Naseem |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
chemistry.chemical_classification Organic field-effect transistor Materials science Charge carrier mobility business.industry 02 engineering and technology Polymer 021001 nanoscience & nanotechnology Condensed Matter Physics Shelf life 01 natural sciences Threshold voltage chemistry.chemical_compound chemistry 0103 physical sciences Thiophene Degradation (geology) Optoelectronics General Materials Science Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Superlattices and microstructures, 2019, Vol.126, pp.125-131 [Peer Reviewed Journal] |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2018.12.022 |
| Popis: | Organic Field Effect Transistors (OFETs) have shown great potential for future electronic technologies due to their low-cost solution processing, mechanical flexibility and potential applications for large area displays. One of the big obstacles in the realization of the practical applications is the inherent poor ambient stability of the OFETs. Here we report on the aging dependent degradation mechanism in the Poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPPDTT) based OFETs in the ambient conditions. These polymer OFETs showed the charge carrier mobility, threshold voltage and current on/off ratios in the range of 0.2 cm2V−1s−1, -15 V and 106 respectively. The device parameters showed variations in their values initially and then became stable with aging after ∼20% initial degradations in the ambient. We have correlated the degradation in the OFET performance parameters with the degradation in the polymer channel layer that is confirmed with a time dependent FTIR spectra. Our findings are thus important to understand and achieve stability in OFET devices by aging them. |
| Databáze: | OpenAIRE |
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