Construction of a metal-organic monolayer-semiconductor junction on a hydrogen-terminated Si(111) surface via Si-C covalent linkage and its electrical properties
Autor: | Kohei Uosaki, D. Qu, Takuya Masuda, Hitoshi Fukumitsu |
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Rok vydání: | 2014 |
Předmět: | |
Zdroj: | Physical chemistry chemical physics : PCCP. 16(21) |
ISSN: | 1463-9084 |
Popis: | A metal–organic monolayer–semiconductor junction, exhibiting a diode behaviour, was constructed on a hydrogen-terminated n-type Si(111) by sequential surface reactions of (1) formation of an organic monolayer with a thiol terminal group, (2) platinum deposition onto the thiol group via adsorption of a platinum complex followed by chemical reduction, and finally (3) continuous Ag layer formation by electroless deposition. Rectifying behaviour was observed at this interface. |
Databáze: | OpenAIRE |
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