Construction of a metal-organic monolayer-semiconductor junction on a hydrogen-terminated Si(111) surface via Si-C covalent linkage and its electrical properties

Autor: Kohei Uosaki, D. Qu, Takuya Masuda, Hitoshi Fukumitsu
Rok vydání: 2014
Předmět:
Zdroj: Physical chemistry chemical physics : PCCP. 16(21)
ISSN: 1463-9084
Popis: A metal–organic monolayer–semiconductor junction, exhibiting a diode behaviour, was constructed on a hydrogen-terminated n-type Si(111) by sequential surface reactions of (1) formation of an organic monolayer with a thiol terminal group, (2) platinum deposition onto the thiol group via adsorption of a platinum complex followed by chemical reduction, and finally (3) continuous Ag layer formation by electroless deposition. Rectifying behaviour was observed at this interface.
Databáze: OpenAIRE