Reduced Exchange Interactions in Magnetic Tunnel Junction Free Layers with Insertion Layers
| Autor: | B. Kardasz, Andrew D. Kent, Jamileh Beik Mohammadi, Mustafa Pinarbasi, Yizhang Chen, Georg Wolf |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Exchange interaction FOS: Physical sciences 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Magnetization Tunnel magnetoresistance 0103 physical sciences Electrode Monolayer Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Materials Chemistry Electrochemistry Perpendicular 0210 nano-technology Layer (electronics) |
| DOI: | 10.48550/arxiv.1905.09329 |
| Popis: | Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a critical role in determining the thermal stability of magnetic states in such devices and their spin torque switching efficiency. Here the exchange constant of free layers incorporated in full magnetic tunnel junction layer stacks, specifically CoFeB free layers with W insertion layers is determined by magnetization measurements in a broad temperature range. A significant finding is that the exchange constant decreases significantly and abruptly with W insertion layer thickness. The perpendicular magnetic anisotropy shows the opposite trend; it initially increases with W insertion layer thickness and shows a broad maximum for approximately one monolayer (0.3 nm) of W. These results highlight the interdependencies of magnetic characteristics required to optimize the performance of magnetic tunnel junction devices. Comment: submitted to Advanced Electronic Materials |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|