Delayed electron capture and formation in ZnSe
| Autor: | Stephen P. Cottrell, R. L. Lichti, R. C. Vilão, S. F. J. Cox, N. Ayres de Campos, H. V. Alberto, Benilde F.O. Costa, J. Piroto Duarte, Kim H. Chow, João Gil, A. Weidinger |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Electron capture Band gap Muonium 02 engineering and technology 01 natural sciences Molecular physics Paramagnetism 0103 physical sciences Electrical and Electronic Engineering 010306 general physics Extrinsic semiconductor Condensed matter physics business.industry Wide-bandgap semiconductor II-VI semiconductors 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Acceptor level 0210 nano-technology business Single crystal Hydrogen |
| Zdroj: | Repositório Científico de Acesso Aberto de Portugal Repositório Científico de Acesso Aberto de Portugal (RCAAP) instacron:RCAAP |
| ISSN: | 0921-4526 |
| Popis: | We have investigated a single crystal of the wide bandgap II–VI semiconductor ZnSe. The sample was highly resistive due to heavy compensation of this n-type semiconductor. In low transverse fields, clear signs of conversion from a paramagnetic to a diamagnetic fraction are observed, at about 60 K. The data are interpreted as delayed electron capture by paramagnetic muonium, forming the negatively charged state Mu - . The implications with respect to the electrical activity of muonium, and by analogy hydrogen, in this semiconductor are analyzed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect