Pellicle films supporting the ramp to HVM with EUV
| Autor: | Arnoud Willem Notenboom, P. J. van Zwol, W. Symens, Maxim A. Nasalevich, Maria Peter, Johan Hendrik Klootwijk, Willem-Pieter Voorthuijzen, R. W. E. van de Kruijs, David Ferdinand Vles, W. J. van der Zande, Evgenia Kurganova, Adrianus Johannes Maria Giesbers |
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| Přispěvatelé: | XUV Optics |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Current generation Materials science business.industry Infrared Extreme ultraviolet lithography 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences High volume manufacturing Operating temperature 0103 physical sciences Emissivity Optoelectronics Graphite 0210 nano-technology business Layer (electronics) |
| Zdroj: | Photomask Technology 2017 |
| Popis: | EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations. |
| Databáze: | OpenAIRE |
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