| Autor: |
Masaki Mizuguchi, K. Nakamura, Takaaki Mano, Koji Horiba, Jun Okabayashi, Masaharu Oshima, A. Fujimori, Kanta Ono |
| Jazyk: |
angličtina |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters. 80(10):1764-1766 |
| ISSN: |
0003-6951 |
| Popis: |
In order to investigate the valence-band discontinuity of the GaAs/AlAs interface, the thickness dependence of the photoemission spectra of a GaAs layer in situ deposited on AlAs by molecular-beam epitaxy has been studied. Although the interface is atomically abrupt, the electronic structure in the interface region displays Al1−xGaxAs alloy-like behaviors. The valence-band maximum as well as the Ga 3d core level show a gradual shift as a function of GaAs layer thickness of less than 2 nm (8 monolayers), which indicates that interface formation needs about 2 nm thickness for the electronic structure of the GaAs layer to become that of bulk GaAs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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