Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction
| Autor: | Yuka Nakata, Kazuma Ikeda, Hirotaka Geka, Yoshitaka Moriyasu, Masamitu Takahasi, Osamu Morohara, Yoshio Ohshita, Hidetoshi Suzuki |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Diffraction Materials science Silicon Nucleation Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences lcsh:QC1-999 Gallium arsenide chemistry.chemical_compound Crystallography chemistry 0103 physical sciences X-ray crystallography 0210 nano-technology Crystal twinning lcsh:Physics Stacking fault |
| Zdroj: | AIP Advances, Vol 6, Iss 3, Pp 035303-035303-6 (2016) |
| ISSN: | 2158-3226 |
| DOI: | 10.1063/1.4943511 |
| Popis: | The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses. |
| Databáze: | OpenAIRE |
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