Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
| Autor: | Alberto Castellazzi, Martin Pfost, Thorsten Oeder |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering business.industry 020209 energy Circuit design Pulse duration Gallium nitride Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology High-electron-mobility transistor 01 natural sciences chemistry.chemical_compound chemistry Robustness (computer science) Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering business Short circuit Voltage |
| Zdroj: | IndraStra Global. |
| ISSN: | 2381-3652 |
| Popis: | In this paper, the short-circuit robustness of a normally-off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational conditions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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