CdSe quantum dot formation induced by amorphous Se

Autor: I. C. Robin, G. Van Tendeloo, Serge Tatarenko, Régis André, Thomas Aichele, Catherine Bougerol
Přispěvatelé: Nanophysique et Semiconducteurs (NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Electron Microscopy for Material Resaerch (EMAT) (EMAT), University of Antwerp (UA)
Rok vydání: 2007
Předmět:
Zdroj: Surface Science
Surface Science, Elsevier, 2007, 601 (13), pp.2664-2666. ⟨10.1016/j.susc.2006.12.001⟩
Surface science: a journal devoted to the physics and chemistry of interfaces
ISSN: 0039-6028
DOI: 10.1016/j.susc.2006.12.001
Popis: The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE