A Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors

Autor:	Tatsuo Higuchi, Hiroshi Inokawa, Takafumi Aoki, Yasuo Takahashi, Katsuhiko Degawa
Rok vydání:	2005
Předmět:	business.industry Computer science Circuit design Logic gate Computer data storage Memory architecture Computer-aided manufacturing Electronic engineering Content-addressable storage Static random-access memory Content-addressable memory business Computer hardware
Zdroj:	ISMVL Scopus-Elsevier
DOI:	10.1109/ismvl.2005.6
Popis:	This paper presents a circuit design of a two-bit-per-cell content-addressable memory (CAM) using single-electron transistors (SETs). The key ideas of the proposed CAM architecture are (i) four-level data storage function implementing by a SET-based static memory cell and (ii) four-level data matching function employing periodic drain-current characteristics of SETs with dynamic phase-shift control. A simple multi-gate SET can be used to realize four-level data matching within a compact CAM cell circuit. As a result, the proposed two-bit-per-cell CAM architecture reduces the number of transistors to 1/3 compared with the conventional CAM architecture.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a74325792023aea1efb431f530ffb74b https://doi.org/10.1109/ismvl.2005.6 Zobrazit plný text záznamu