Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy
| Autor: | Yoshiharu Izumi, Shunichi Muto, Satoru Adachi, Masataka Koyama, Xiangmeng Lu, Yoshiaki Nakata |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Distribution (number theory) Condensed Matter - Mesoscale and Nanoscale Physics business.industry General Engineering Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences General Physics and Astronomy Ternary alloy Quantum dot Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Optoelectronics business Scaling Molecular beam epitaxy |
| Popis: | We studied the size distribution and its scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs with the Stranski-Krastanov (SK) mode by molecular beam epitaxy (MBE), at both 480{\deg}C and 510{\deg}C, as a function of InAlAs coverage. A scaling function of the volume was found for the first time in ternary alloy QDs. The function was similar to that of InAs/GaAs QDs, which agreed with the scaling function for the two-dimensional submonolayer homoepitaxy simulation with a critical island size of i = 1. However, a character of i = 0 was also found as a tail in the large volume. Comment: 19 pages, 6 figures |
| Databáze: | OpenAIRE |
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