2D and 3D TCAD simulation of III-V channel FETs at the end of scaling
| Autor: | Martin Rau, Andreas Schenk, Paulina Aguirre |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Mobility model
Nanowire 02 engineering and technology 01 natural sciences Molecular physics Gallium arsenide chemistry.chemical_compound Computer Science::Emerging Technologies 0103 physical sciences Materials Chemistry Diffusion (business) Electrical and Electronic Engineering Scaling Quantum Quantum tunnelling 010302 applied physics Physics Condensed matter physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Logic gate Density of states Field-effect transistor 0210 nano-technology Fermi gas Order of magnitude |
| Zdroj: | Solid-State Electronics, 159 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2019.03.043 |
| Popis: | Quantum drift diffusion corrections, models for the one- and two-dimensional density of states, a non-local model for source-to-drain tunneling, and a simple ballistic mobility model are jointly used to simulate I D V GS -characteristics of scaled III-V-channel nFETs. The sub-threshold swing of double-gate ultra-thin-body and gate-all-around nanowire geometries are extracted for different gate lengths, and the semi-classical results are compared with those from the quantum transport simulator QTx. The low-dimensional density of states in combination with the ballistic mobility yields an overall good agreement with the QTx transfer curves after the onset of inversion and decreases I ON by two orders of magnitude in comparison to the simulation with a large diffusive mobility. It is shown that source-to-drain tunneling sets a limit to scaling at a gate length of about 10 nm due to the degradation of the sub-threshold swing. Simulating this effect with a low-dimensional density of states reveals inconsistencies. They are attributed to the tunneling model, which had been derived for a three-dimensional electron gas. |
| Databáze: | OpenAIRE |
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