Design and growth investigations of strained In/sub x/Ga/sub 1-x/As/InAlAs/InP heterostructures for high electron mobility transistor application
| Autor: | Xavier Letartre, C. Santinelli, M. Ambri, M. Pitaval, V. Drouot, Michel Gendry, Pierre Viktorovitch, Jacques Tardy, G. Hollinger |
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| Přispěvatelé: | Laboratoire d'électronique, automatique et mesures électriques (LEAME), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon, Département de Physique des Matériaux (DPM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 1996 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance Doping chemistry.chemical_element Heterojunction 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Gallium arsenide Barrier layer chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical and Electronic Engineering 0210 nano-technology business ComputingMilieux_MISCELLANEOUS Indium Molecular beam epitaxy |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1996, 43 (9), pp.1326-1335. ⟨10.1109/16.535315⟩ |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.535315 |
| Popis: | Strained In/sub x/Ga/sub 1-x/As/InAlAs modulation-doped heterostructures on InP have been studied theoretically and experimentally. Simulations based on self-consistently solving the Schrodinger-Poisson equations have been performed to investigate the influeuce of the design parameters, namely the layer thicknesses and the doping level in the barrier layer, on the carrier concentration n, in the channel. Modulation-doped heterostructures with a 100 /spl Aring/ strained indium-rich channel have been grown by molecular beam epitaxy for different indium compositions and growth temperatures. The highest performances in terms of n,/spl times//spl mu/ parameter, have been obtained for an indium concentration of 75% in the channel, at a growth temperature of 500/spl deg/C. For higher indium concentration, the mobility drops sharply, which correlates with formation of misfit dislocations in the channel, observed on transmission electron microscopy micrographs of these structures. For an indium concentration of 75%, the mobility has been improved, first, by using a low V/III beam equivalent pressure ratio, that produces a close to stoichiometry material, second by using interface growth interruption under cation stabilization to reduce the interface roughness. HEMT devices have been processed on these heterostructures. The static I-V characteristics of 2/spl times/150 /spl mu/m/sup 2/ transistors revealed a 66% increase of the transconductance when the channel indium concentration is increased from 53% to 75%. |
| Databáze: | OpenAIRE |
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