Supplementary single active device based grounded immittance function simulators
Autor: | Erkan Yuce, Mehmet Dogan |
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Rok vydání: | 2018 |
Předmět: |
Computer science
Spice Capacitance IBCCII Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Electric inductors Inductor CFOA law.invention MOSFET law Grounded immittance function simulator Negative capacitance Simulators Electric grounding Current conveyor Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical and Electronic Engineering Second generation current conveyors Operational amplifiers Current feedback operational amplifier Electronic circuit IBCCII+ Current-feedback operational amplifier 020208 electrical & electronic engineering 020206 networking & telecommunications Power supply voltage Bandpass filters Feedback amplifiers Immittance Frequency dependent MOS-FET Resistor Negative impedance converter |
Zdroj: | AEU - International Journal of Electronics and Communications. 94:311-321 |
ISSN: | 1434-8411 |
DOI: | 10.1016/j.aeue.2018.07.016 |
Popis: | New five grounded immittance function simulators are proposed in this paper. The first one is a positive lossless grounded inductor simulator which employs just one inverting buffer plus-type second-generation current conveyor while the other four proposed circuits include only one non-inverting current feedback operational amplifier. The second and third ones are negative lossless grounded inductor simulators. The fourth one is a positive inductor with a series positive resistor while the last one is a negative capacitance multiplier. All of the proposed circuits except the first one consist of only grounded capacitor(s). However, all of the proposed circuits need a single passive component matching condition. A band-pass filter composed of the first proposed circuit is given as an example. Also, frequency dependent non-ideal gain effects on the performance of all the circuits are given. The results of a lot of SPICE simulations are carried out by using 0.13 µm IBM technology parameters where ± 0.75 V DC symmetrical power supply voltages are utilized. In order to demonstrate the performance of the first proposed circuit, an experimental result is given as an example. © 2018 Elsevier GmbH |
Databáze: | OpenAIRE |
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