Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement
| Autor: | DOU, CHUN MENG, Dou, Chunmeng, Shoji, Tomoya, Nakajima, Kazuhiro, KAKUSHIMA, Kuniyuki, AHMET, PARHAT, Kataoka, Yoshinori, Nishiyama, Akira, Sugii, Nobuyuki, Wakabayashi, Hitoshi, TSUTSUI, KAZUO, Natori, Kenji, IWAI, HIROSHI |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Nanostructure
Materials science Fin Annealing (metallurgy) Analytical chemistry Silicon on insulator Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Planar Wafer Electrical and Electronic Engineering Safety Risk Reliability and Quality Forming gas Diode |
| Zdroj: | Microelectronics Reliability. 54(4):725-729 |
| Popis: | Adopting the gated p–i–n diode configuration, the interface state density ( D it ) at the Si/SiO 2 interface of Si fin structures on Silicon-on-Insulator (SOI) wafers has been systematically studied using charge pumping method. The optimal forming gas annealing temperature for the three-dimensional (3D) surface is extracted. A new methodology for separately quantifying the local D it at different regions of the 3D surfaces (i.e., the top/side walls and the corners) is also derived by characterizing the fins with various widths and the planar counterparts. The results validate the necessity to independently consider the corner regions, at which substantially high local D it situates, and thus further clarify the origin of high D it at 3D surfaces. |
| Databáze: | OpenAIRE |
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