SiGe nano-heteroepitaxy: An investigation of the nano-template
| Autor: | M. Mastari, J.M. Hartmann, Maxime Argoud, Matthew Charles, A.M. Papon, O. Kononchuck, Raluca Tiron, D. Landru, Patricia Pimenta-Barros, Y. Kim |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Diffraction Coalescence (physics) [PHYS]Physics [physics] Materials science business.industry Atomic force microscopy 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry Template Transmission electron microscopy 0103 physical sciences Nano Materials Chemistry Copolymer Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2019, 527, pp.125232-. ⟨10.1016/j.jcrysgro.2019.125232⟩ Journal of Crystal Growth, 2019, 527, pp.125232-. ⟨10.1016/j.jcrysgro.2019.125232⟩ |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2019.125232⟩ |
| Popis: | In this paper, we have evaluated the impact of the nano-template used for the nano-heteroepitaxy of SiGe layers in a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. A process flow based on diblock copolymer patterning was used to fabricate honeycombed nanometer-sized templates. Various integration schemes were designed in order to measure the impact of pitch, the presence (or not) of the nano-template during coalescence and the nature of the masking dielectrics itself. 200 nm thick SiGe 24% layers were grown on 20 nm high SiGe 24% nano-pillars and characterized by Atomic Force Microscopy, X-Ray Diffraction and Transmission Electron Microscopy. Results showed more flexibility in terms of surface preparation with higher pitch size nano-templates. Removal of the nano-template did not improve the relaxation of coalesced layers. Changing the nature of the dielectrics used as masking material in the nano-template (SiO2 versus SiN) proved that the thermal stress generated during growth was not a source of defects. |
| Databáze: | OpenAIRE |
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