Impedance Analysis and Noise Measurements on Multi Walled Carbon Nanotube Networks
| Autor: | Usha Philipose, Yan Jiang, Brianna Western, Michael Harcrow, Chris Littler, Ashok Sood, John W. Zeller, Bobby Lineberry, A. J. Syllaios |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
multi-walled
Technology Microscopy QC120-168.85 carbon nanotubes 1/f noise QH201-278.5 Nyquist analysis impedance permittivity packing density tunneling Engineering (General). Civil engineering (General) Article TK1-9971 Descriptive and experimental mechanics General Materials Science Electrical engineering. Electronics. Nuclear engineering TA1-2040 |
| Zdroj: | Materials, Vol 14, Iss 7509, p 7509 (2021) Materials; Volume 14; Issue 24; Pages: 7509 Materials |
| ISSN: | 1996-1944 |
| Popis: | The electrical impedance characteristics of multi-walled carbon nanotube (MWCNTs) networks were studied as a function of CNT concentrations in the frequency range of 1 kHz–1 MHz. The novelty of this study is that the MWCNTs were not embedded in any polymer matrix and so the response of the device to electrical measurements are attributed to the CNTs in the network without any contribution from a polymer host matrix. Devices with low MWCNT packing density (0.31–0.85 µg/cm2) exhibit a frequency independent plateau in the low-frequency regime. At higher frequencies, the AC conductivity of these devices increases following a power law, characteristic of the universal dynamic response (UDR) phenomenon. On the other hand, devices with high MWCNT concentrations (>1.0 µg/cm2) exhibit frequency independent conductivity over the entire frequency range (up to 1 MHz), indicating that conduction in these devices is due to direct contact between the CNTs in the network. A simple single-relaxation time electrical equivalent circuit with an effective resistance and capacitance is used to describe the device performance. The electrical noise measurements on devices with different MWCNT packing densities exhibit bias-dependent low-frequency 1/f noise, attributed to resistance fluctuations. |
| Databáze: | OpenAIRE |
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