GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
Autor: | Bahareh Marzban, Jeremy Witzens, Hans Sigg, Zoran Ikonic, T. Zabel, J. M. Hartmann, Francesco Armand-Pilon, Dan Buca, Nils von den Driesch, Daniela Stange, Denis Rainko, Giovanni Capellini, Peter Zaumseil, Detlev Grützmacher, Siegfried Mantl |
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Přispěvatelé: | Stange, Daniela, von den Driesch, Nil, Zabel, Thoma, Armand-Pilon, Francesco, Rainko, Deni, Marzban, Bahareh, Zaumseil, Peter, Hartmann, Jean-Michel, Ikonic, Zoran, Capellini, Giovanni, Mantl, Siegfried, Sigg, Han, Witzens, Jeremy, Grützmacher, Detlev, Buca, Dan |
Rok vydání: | 2018 |
Předmět: |
Materials science
Physics::Optics 02 engineering and technology Double heterostructure 01 natural sciences Semiconductor laser theory law.invention law 0103 physical sciences Electrical and Electronic Engineering Quantum well 010302 applied physics Silicon photonics business.industry Heterojunction 021001 nanoscience & nanotechnology Laser Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Wavelength Optoelectronics 0210 nano-technology business Lasing threshold Biotechnology |
ISSN: | 2330-4022 |
Popis: | GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source offering a number of design options from bulk to heterostructures and quantum wells. Here, we investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect. Three complex heterostructures were grown on top of 200 nm thick strain-relaxed Ge0.9Sn0.1 buffers. The lasing is investigated in terms of threshold and maximal lasing operation temperature by comparing multiple quantum well to double heterostructure samples. Pumping under two different wavelengths of 1064 and 1550 nm yields comparable lasing thresholds. The design with multi quantum wells reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures. Moreover, 20 K higher maximal lasing temperatures were found for lower energy pumping of 1550 nm. |
Databáze: | OpenAIRE |
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