Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors
| Autor: | Xuan Zhang, Yunfei Gu, Pai Wang, Vaibhav Verma, Mircea R. Stan, Dengxue Yan |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
reliability Property (programming) Computer science Reliability (computer networking) lcsh:Applications of electric power 02 engineering and technology lcsh:TK4001-4102 01 natural sciences Sizing 020202 computer hardware & architecture Dual (category theory) Near Threshold Computing (NTC) dual-supply electrical_electronic_engineering 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering write aggregation buffer Leverage (statistics) Static random-access memory Electrical and Electronic Engineering Static Random Access Memory (SRAM) Voltage Efficient energy use |
| Zdroj: | Journal of Low Power Electronics and Applications Volume 8 Issue 3 Journal of Low Power Electronics and Applications, Vol 8, Iss 3, p 28 (2018) |
| ISSN: | 2079-9268 |
| DOI: | 10.3390/jlpea8030028 |
| Popis: | Energy-efficient microprocessors are essential for a wide range of applications. While near-threshold computing is a promising technique to improve energy efficiency, optimal supply demands from logic core and on-chip memory are conflicting. In this paper, we perform static reliability analysis of 6T SRAM and discover the variance among different sizing configuration and asymmetric minimum voltage requirements between read and write operations. We leverage this asymmetric property i n near-threshold processors equipped with voltage boosting capability by proposing an opportunistic dual-supply switching scheme with a write aggregation buffer. Our results show that proposed technique improves energy efficiency by more than 21.45% with approximate 10.19% performance speed-up. |
| Databáze: | OpenAIRE |
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