Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface
Autor: | H. Němec, T. Janda, František Trojánek, Václav Novák, P. Kužel, L. Nadvornik, Petr Němec, Jörg Wunderlich, T. Jungwirth, V. Skoromets, K. Olejník |
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Rok vydání: | 2015 |
Předmět: |
Physics
Multidisciplinary Spintronics Spins business.industry Transistor Doping Heterojunction 02 engineering and technology Substrate (electronics) Nanosecond 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Article law.invention Condensed Matter::Materials Science law 0103 physical sciences Optoelectronics Condensed Matter::Strongly Correlated Electrons 010306 general physics 0210 nano-technology business Layer (electronics) |
Zdroj: | Scientific Reports |
ISSN: | 2045-2322 |
Popis: | The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate doping, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures. |
Databáze: | OpenAIRE |
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