Work Function Tuning of Zinc–Tin Oxide Thin Films Using High-Density O2 Plasma Treatment
| Autor: | Woo-Jung Lee, Doo-Seung Um, Yong-Duck Chung, Chang-Il Kim, Jae-Hyung Wi, Dae-Hyung Cho, Saewon Kang, Young-Hee Joo |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Band gap work function UPS law.invention X-ray photoelectron spectroscopy transparent conductive oxide law Materials Chemistry Transmittance zinc tin oxide XPS Work function Thin film Transparent conducting film business.industry O2 plasma Surfaces and Interfaces Semiconductor device surface treatment Surfaces Coatings and Films lcsh:TA1-2040 Optoelectronics lcsh:Engineering (General). Civil engineering (General) business Light-emitting diode |
| Zdroj: | Coatings Volume 10 Issue 11 Coatings, Vol 10, Iss 1026, p 1026 (2020) |
| ISSN: | 2079-6412 |
| DOI: | 10.3390/coatings10111026 |
| Popis: | Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the work function of ZnSnO thin films using high-density O2 plasma treatment. The work function and chemical composition of the ZnSnO thin film surfaces were investigated with regards to plasma treatment time through UPS/XPS systems. The optical band gap was estimated using Tauc&rsquo s relationship from transmittance data. The work function of Zn0.6Sn0.4O thin film increased from 4.16 eV to 4.64 eV, and the optical band gap increased from 3.17 to 3.23 eV. The surface of Zn0.6Sn0.4O thin films showed a smooth morphology with an average of 0.65 nm after O2 plasma treatment. The O2 plasma treatment technique exhibits significant potential for application in high-performance displays in optical devices, such as thin-film transistors (TFTs), light-emitting diodes (LEDs), and solar cells. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|