Precipitate Formation in Heavily Al-Doped 4H-SiC Layers

Autor:	Lars Hultman, Bengt Gunnar Svensson, Per Persson, Uwe Zimmermann, Margareta K. Linnarsson, Susanne Karlsson, Martin S. Janson, Rositza Yakimova, H. Bleichner, H. Andersson
Rok vydání:	2001
Předmět:	Atmosphere Materials science chemistry Mechanics of Materials Precipitation (chemistry) Aluminium Mechanical Engineering Doping Metallurgy chemistry.chemical_element General Materials Science Condensed Matter Physics Epitaxy
Zdroj:	Scopus-Elsevier
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.353-356.583
Popis:	Epitaxially grown 4H-SiC structures with several heavily Al doped layers were used. The samples were annealed in Ar atmosphere in a RF-heated furnace between 1500 and 2900 degreesC for 0.5 to 3h. S ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5cc88eeb81f353fcd684cad348d6609 https://doi.org/10.4028/www.scientific.net/msf.353-356.583 Zobrazit plný text záznamu