Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate
| Autor: | Nicolas Chauvin, Bouraoui Ilahi, Mohamed Helmi Hadj Alouane, Olfa Nasr, Mohamad M. Ahmad, H. Khmissi, Catherine Bru-Chevallier, Gilles Patriarche, Michel Gendry |
|---|---|
| Přispěvatelé: | Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), King Saud University [Riyadh] (KSU), Northern Borders University, Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), ANR-11-NANO-0012,INSCOOP,Intégration de Nanofils III-V sur SOI pour COnnections Optiques sur Puce.(2011) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Nanostructure
Materials science Photoluminescence Silicon Biophysics Nanowire chemistry.chemical_element 02 engineering and technology 010402 general chemistry 01 natural sciences 7. Clean energy Biochemistry Wurtzite crystal structure business.industry General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics 0104 chemical sciences Semiconductor chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Photonics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Journal of Luminescence Journal of Luminescence, Elsevier, 2021, 231, pp.117814. ⟨10.1016/j.jlumin.2020.117814⟩ |
| ISSN: | 0022-2313 1872-7883 |
| DOI: | 10.1016/j.jlumin.2020.117814⟩ |
| Popis: | International audience; The emergence of semiconductor nanowires (NWs) as a new class of functional materials has generated a great interest in the scientific community in the fields of electronics, photonics and energy. In this work, we report on the optical properties of telecom-band emitting InAs/InP quantum rod-nanowires (QR-NWs) grown on silicon substrates by gold catalyst assisted molecular beam epitaxy (MBE). The energies of A and B band transitions in wurtzite InAs QRs are numerically evaluated by finite element method (FEM) as a function of the QR geometry and strain and compared with the experimental results obtained from photoluminescence (PL). Temperature-dependent optical properties of the QR-NWs are studied revealing that the integrated PL intensity keeps up to 30% of its value at 14 K which testify a high stability of the PL intensity. Furthermore, the investigated nanostructure shows a room temperature emission wavelength at 1.55 μm. These results demonstrate a great promise for telecom-band III-V nanoemitters monolithically grown on silicon. |
| Databáze: | OpenAIRE |
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