Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks
| Autor: | Ievgen Kabin, Peter Langendoerfer, Dmytro Petryk, Eduardo Perez, Christian Wenger, Mamathamba Kalishettyhalli Mahadevaiaha, Zoya Dyka |
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| Jazyk: | angličtina |
| Předmět: |
FOS: Computer and information sciences
Computer Science - Cryptography and Security Computer science chemistry.chemical_element Fault (power engineering) 01 natural sciences law.invention 03 medical and health sciences 0302 clinical medicine law Hardware Architecture (cs.AR) 0103 physical sciences Irradiation Sensitivity (control systems) Computer Science - Hardware Architecture 010302 applied physics business.industry Fault injection Laser Resistive random-access memory chemistry CMOS Optoelectronics Tin business Cryptography and Security (cs.CR) 030217 neurology & neurosurgery |
| Zdroj: | 2020 23rd Euromicro Conference on Digital System Design (DSD) |
| DOI: | 10.1109/dsd51259.2020.00047 |
| Popis: | Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail. Experimental results show the feasibility to influence the state of the cells under laser irradiation, i.e. successful optical Fault Injection. We focus on the selection of the parameters of the laser station and their influence on the success of optical Fault Injections. |
| Databáze: | OpenAIRE |
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