Pristine Graphene Insertion at the Metal/Semiconductor Interface to Minimize Metal-Induced Gap States
| Autor: | Chang-Won Choi, Seong-Jun Yang, Jun-Ho Park, Cheol-Joo Kim, Si-Young Choi |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Condensed matter physics Silicon Graphene business.industry Schottky barrier Bilayer chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Semiconductor chemistry law General Materials Science Metal-induced gap states 0210 nano-technology business Current density Surface states |
| Zdroj: | ACS Applied Materials & Interfaces. 13:22828-22835 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.1c03299 |
| Popis: | Metal (M) contact with a semiconductor (S) introduces metal-induced gap states (MIGS), which makes it difficult to study the intrinsic electrical properties of S. A bilayer of metal with graphene (Gr), i.e., a M/Gr bilayer, may form a contact with S to minimize MIGS. However, it has been challenging to realize the pristine M/Gr/S junctions without interfacial contaminants, which result in additional interfacial states. Here, we successfully demonstrate the atomically clean M/Gr/n-type silicon (Si) junctions via all-dry transfer of M/Gr bilayers onto Si. The fabricated M/Gr/Si junctions significantly increase the current density J at reverse bias, compared to those of M/Si junctions without a Gr interlayer (e.g., by 105 times for M = Au in Si(111)). The increase of the reverse J by a Gr interlayer is more prominent in Si(111) than in Si(100), whereas in M/Si junctions, J is independent of the type of Si surface. The different transport data between M/Gr/Si(111) and M/Gr/Si(100) are consistent with Fermi-level pinning by different surface states of Si(111) and Si(100). Our findings suggest the effective way to suppress MIGS by an introduction of the clean Gr interlayer, which paves the way to study intrinsic electrical properties of various materials. |
| Databáze: | OpenAIRE |
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