Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride
| Autor: | Ye Wang, Gaokai Wang, Zhigang Yin, Yanan Chen, Junhua Meng, Jinliang Wu, Peng Jin, Yan Tian, Jingbi You, Xingwang Zhang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Doping Photodetector 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology medicine.disease_cause 01 natural sciences 0104 chemical sciences Crystallinity Responsivity Sputtering Impurity Atom medicine Optoelectronics General Materials Science 0210 nano-technology business Ultraviolet |
| Zdroj: | ACS Applied Materials & Interfaces. 12:27361-27367 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.0c05850 |
| Popis: | Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA·W-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors. |
| Databáze: | OpenAIRE |
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