Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field
| Autor: | Bo Wang, Sang Mo Yang, Saikat Das, Long Qing Chen, Seung Chul Chae, Jin Seok Chung, Tae Won Noh, Sung Min Park, Jong-Gul Yoon |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Flexoelectricity Biomedical Engineering Bioengineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Ferroelectricity Atomic and Molecular Physics and Optics Scanning probe microscopy 0103 physical sciences Optoelectronics Domain engineering General Materials Science Multiferroics Electrical and Electronic Engineering Thin film 010306 general physics 0210 nano-technology business Polarization (electrochemistry) Nanoscopic scale |
| Zdroj: | Nature Nanotechnology. 13:366-370 |
| ISSN: | 1748-3395 1748-3387 |
| DOI: | 10.1038/s41565-018-0083-5 |
| Popis: | Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage. A trailing flexoelectric field induced by SPM tip motion enables the selective control of multiple domain switching pathways in ferroelectric materials. |
| Databáze: | OpenAIRE |
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