Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection
Autor: | Yongle Qi, Guoqi Zhang, Xinpeng Lin, Wenmao Li, Yu-Long Jiang, Jian Zhang, Ganhui Chen, Hongyu Yu, Yumeng Zhu, Robert Sokolovskij |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Imagination
Chemical substance Materials science Hydrogen sulfide media_common.quotation_subject 02 engineering and technology High-electron-mobility transistor 010402 general chemistry 01 natural sciences law.invention chemistry.chemical_compound AlGaN/GaN Magazine law Materials Chemistry Electrical and Electronic Engineering Instrumentation Saturation (magnetic) HEMT media_common business.industry H2S Transistor Metals and Alloys Pt 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology Science technology and society business Gas sensor |
Zdroj: | Sensors and Actuators B: Chemical: international journal devoted to research and development of physical and chemical transducers, 280 |
ISSN: | 0925-4005 |
Popis: | In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation. |
Databáze: | OpenAIRE |
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