Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Autor: Yongle Qi, Guoqi Zhang, Xinpeng Lin, Wenmao Li, Yu-Long Jiang, Jian Zhang, Ganhui Chen, Hongyu Yu, Yumeng Zhu, Robert Sokolovskij
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Sensors and Actuators B: Chemical: international journal devoted to research and development of physical and chemical transducers, 280
ISSN: 0925-4005
Popis: In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.
Databáze: OpenAIRE