Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water
| Autor: | Marianna Kemell, Jyrki Räisänen, Mikko Ritala, Jere Tupala, Timo Hatanpää, Kristoffer Meinander, Markku Leskelä, Miika Mattinen, Sanni Seppälä |
|---|---|
| Přispěvatelé: | Department of Chemistry, Department of Physics, Mikko Ritala / Principal Investigator, Department |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon Annealing (metallurgy) Inorganic chemistry 116 Chemical sciences chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces equipment and supplies 021001 nanoscience & nanotechnology Condensed Matter Physics Tin oxide 01 natural sciences Surfaces Coatings and Films Amorphous solid Crystallinity Atomic layer deposition chemistry Impurity 0103 physical sciences 0210 nano-technology Tin |
| Popis: | Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl) amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films grown on soda lime glass and silicon substrates were uniform across the substrates. With the water process the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, the growth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for composition and morphology. The films deposited with water showed crystallinity with the tetragonal SnO phase, and annealing in air increased the conductivity of the films while the SnO2 phase appeared. All the films deposited with ozone contained silicon as an impurity and were amorphous and nonconductive both as-deposited and after annealing. The films were further deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements. The TiO2 nanostructure functioned also as a test structure for conformality of the processes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|