Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM
| Autor: | J. O. Oelerich, Andreas Beyer, C. Fuchs, P. Kükelhan, Lennart Duschek, Wolfgang Stolz, Kerstin Volz, Saleh Firoozabadi |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
02 engineering and technology Substrate (electronics) 01 natural sciences law.invention Inorganic Chemistry Metal Physik law 0103 physical sciences Scanning transmission electron microscopy Materials Chemistry ddc:530 Growth rate Quantum well 010302 applied physics business.industry Physics Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Dark field microscopy visual_art visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Crystal Growth |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2019.125180 |
| Popis: | Surface segregation and interaction effects of In and Sb in (GaIn)As/Ga(AsSb)/(GaIn)As- ���W���-type quantum well heterostructures (���W���-QWHs) are investigated by high angle annular dark field scanning transmission electron microscopy with atomic resolution. ���W���-QWHs are promising candidates for type-II laser applications in telecommunications. In this study, independent (GaIn)As and Ga(AsSb) quantum wells as well as complete ���W���-QWHs are grown by metal organic vapour phase epitaxy on GaAs substrate. The composition is determined with atomic resolution by comparison of the experimental data to complementary contrast simulations. From concentration profiles, an altered segregation in ���W���-QWHs in comparison to single (GaIn)As and Ga(AsSb) quantum wells grown on GaAs is detected. In and Sb are clearly influencing each other during the growth, including blocking effects of In incorporation by Sb and vice versa. Especially, growth rate and total amount of Sb incorporated into Ga(AsSb) are decreased by In being present. |
| Databáze: | OpenAIRE |
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