Highly durable and flexible gallium-based oxide conductive-bridging random access memory
| Autor: | Po-Tsun Liu, Kai Jhih Gan, Dun-Bao Ruan, Simon M. Sze, Ta Chun Chien |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Information storage
Bridging (networking) Materials science Programmable metallization cell chemistry.chemical_element lcsh:Medicine 02 engineering and technology 01 natural sciences Article Electronic and spintronic devices 0103 physical sciences Electronic devices Gallium lcsh:Science Electrical conductor Electronic circuit 010302 applied physics Multidisciplinary business.industry lcsh:R 021001 nanoscience & nanotechnology Thermal conduction chemistry Optoelectronics lcsh:Q 0210 nano-technology business Temperature coefficient Voltage |
| Zdroj: | Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019) Scientific Reports |
| ISSN: | 2045-2322 |
| DOI: | 10.1038/s41598-019-50816-7 |
| Popis: | The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits. |
| Databáze: | OpenAIRE |
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