Photoluminescence and infrared spectroscopy for the study of defects in silicon for photovoltaic applications
| Autor: | Adele Sassella, Alessia Le Donne, Simona Binetti |
|---|---|
| Přispěvatelé: | Binetti, S, LE DONNE, A, Sassella, A |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Photoluminescence Field (physics) Silicon Renewable Energy Sustainability and the Environment Infrared business.industry Photovoltaic system Infrared spectroscopy chemistry.chemical_element Surfaces Coatings and Films Electronic Optical and Magnetic Materials CHIM/02 - CHIMICA FISICA FIS/01 - FISICA SPERIMENTALE chemistry IR spectroscopy Impurity Impuritie SoG-Si Optoelectronics Microelectronics Defect business mc-Si |
| Zdroj: | Solar Energy Materials and Solar Cells. 130:696-703 |
| ISSN: | 0927-0248 |
| Popis: | It is widely known that photoluminescence (PL) and infrared (IR) spectroscopies are among the experimental tools extensively used in the last decades for the study of impurities and defects in silicon for both microelectronic and photovoltaic applications. This review paper reports the main historical achievements and recent developments obtained in this field by PL and IR, paying particular attention to the most useful data for the study of defects in silicon for photovoltaic applications. © 2014 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect