Electric field ionization of boron acceptors in single-crystalline diamond
| Autor: | Miron S. Kagan, V. G. Ralchenko, S. K. Paprotskiy, I. V. Altukhov, R. A. Khmel’nitskiy, N. A. Khvalkovskiy, Andrey Bolshakov, N. B. Rodionov |
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| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics General Physics and Astronomy Schottky diode Diamond chemistry.chemical_element Conductivity engineering.material 01 natural sciences chemistry Electric field Ionization 0103 physical sciences engineering 010306 general physics Boron Ohmic contact Recombination |
| Zdroj: | Scopus-Elsevier |
| Popis: | Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to ∼ 5⋅105 V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free carriers (holes) and acceptors were determined. The hole recombination time at boron acceptors has been estimated. The mechanisms of electric field ionization of boron acceptors are discussed. |
| Databáze: | OpenAIRE |
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