Towards a better understanding of trench defects in InGaN/GaN quantum wells

Autor:	Fabrice Oehler, Ej Thrush, L. Trinh-Xuan, Rachel A. Oliver, Colin J. Humphreys, Sneha Rhode, S.-L. Sahonta, D. Lodié, Menno J. Kappers, F.C-P. Massabuau
Rok vydání:	2013
Předmět:	History Materials science business.industry Stacking Cathodoluminescence Crystallographic defect Computer Science Applications Education Optics Transmission electron microscopy Trench Microscopy Optoelectronics business QC Quantum well Stacking fault
Zdroj:	Journal of Physics: Conference Series. 471:012042
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/471/1/012042
Popis:	Trench defects are a commonly occurring feature in InGaN/GaN quantum well (QW) structures. This defect appears at the surface of a structure as a trench enclosing a region of material with peculiar emission properties. Transmission electron microscopy was used to characterise the sub-surface structure of such defect. It consists of a basal-plane stacking fault (BSF) located in the QW stack and bound by a vertical stacking mismatch boundary (SMB) which runs towards the surface and which opens up into pits, which merge to form a trench. Atomic force microscopy and cathodoluminescence were performed on the same individual defects in order to directly correlate the morphology with the emission properties. A strong correlation has been established between the thickness of the trench and the redshift and intensity of the emission of the enclosed region suggesting that bright trench defects emitting at a longer wavelength nucleate early during the growth. Data also suggest that the SMB may act as a non-radiative recombination centre.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a49de9e018b05d5c5e16d136b2658f39 https://doi.org/10.1088/1742-6596/471/1/012042 Zobrazit plný text záznamu