Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
| Autor: | Vitaliy Avrutin, Yu. Makarov, Natalia Izyumskaya, O. Andrieiev, Alexander Usikov, Kai Ding, Heikki Helava, Michael A. Reshchikov, M. Vorobiov |
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| Rok vydání: | 2020 |
| Předmět: |
Photoluminescence
Materials science Analytical chemistry lcsh:Medicine chemistry.chemical_element 02 engineering and technology Epitaxy 01 natural sciences Article Matrix (chemical analysis) Surfaces interfaces and thin films Impurity 0103 physical sciences Reactive-ion etching lcsh:Science 010302 applied physics Multidisciplinary lcsh:R 021001 nanoscience & nanotechnology Nitrogen Secondary ion mass spectrometry Semiconductors chemistry lcsh:Q 0210 nano-technology Carbon |
| Zdroj: | Scientific Reports, Vol 10, Iss 1, Pp 1-7 (2020) Scientific Reports |
| ISSN: | 2045-2322 |
| DOI: | 10.1038/s41598-020-59033-z |
| Popis: | Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion mass spectrometry (SIMS) measurements. Comparison of PL and SIMS data has revealed that apparently high concentrations of C and O at depths up to 1 µm in SIMS profiles do not represent depth distributions of these species in the GaN matrix but are rather caused by post-growth surface contamination and knocking-in impurity species from the surface. In particular, PL analysis supplemented by reactive ion etching up to the depth of 400 nm indicates that the concentration of carbon in nitrogen sites is below 2–5 × 1015 cm−3 at any depth of GaN samples grown by HVPE. We demonstrate that PL is a very sensitive and reliable tool to determine the concentrations of impurities in the GaN matrix. |
| Databáze: | OpenAIRE |
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