Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxy

Autor:	V. P. Kuznetsov, C.A.J. Ammerlaan, A.V. Antonov, V. B. Shmagin, E. A. Uskova, Z. F. Krasilnik, G. Pensl, O. A. Kuznetsov, Boris A. Andreev
Přispěvatelé:	WZI (IoP, FNWI)
Rok vydání:	2002
Předmět:	Ion implantation Materials science Annealing (metallurgy) Analytical chemistry Sublimation (phase transition) Ionization energy Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Shallow donor Electronic Optical and Magnetic Materials Molecular beam epitaxy Ion
Zdroj:	Fizika i tehnika poluprovodnikov, 36, 178-182. Lzdatel'stvo Nauka
ISSN:	1090-6479 1063-7826 0015-3222
DOI:	10.1134/1.1453432
Popis:	Electrically active centers in light-emitting Si:Er layers grown by sublimation molecular-beam epitaxy (SMBE) on single-crystal Si substrates have been investigated by admittance spectroscopy with temperature scanning and by DLTS. The total density of electrically active centers is defined by shallow donor centers with ionization energies of 0.016–0.045 eV. The effect of growth conditions and post-growth annealing on the composition and density of electrically active centers has been studied. Significant differences in composition of the electrically active centers with deep levels and in channels of energy transfer from the electron subsystem of a crystal to Er3+ ions between Si:Er layers grown by SMBE and ion implantation have been revealed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a47ba590eee9247f01cdff4fbccb2286 https://doi.org/10.1134/1.1453432 Zobrazit plný text záznamu Plný text ve formátu PDF