Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates

Autor:	I. A. Subbotin, A. L. Vasil’ev, V. V. Roddatis, M. V. Kovalchuk, Imamov Rafik M, I. S. Vasil’evskii, G. B. Galiev, Dmitry Ponomarev, E. A. Klimov
Rok vydání:	2011
Předmět:	X-ray absorption spectroscopy Materials science Condensed matter physics Doping chemistry.chemical_element Heterojunction General Chemistry Condensed Matter Physics Crystallographic defect chemistry Phase (matter) General Materials Science Quantum well Indium Wurtzite crystal structure
Zdroj:	Crystallography Reports
ISSN:	1562-689X 1063-7745
Popis:	A complex study of the effect ofintroduction of nanoscale InAs inserts of different thicknesses into an In0.53Ga0.47As quantum well on the electrical properties and structural features of In0.50Al0.50As/In0.53Ga0.47As/In0.50Al0.50As nanoheterostructures with bilateral delta-Si doping grown on InP substrates has been performed. The layers of nanoheterostructures with a weak lattice mismatch are found to be equally (cube-on-cube) oriented. The introduction of a nanoscale InAs insert leads to an increase in mobility. At an insert thickness of about 1.8 nm, the effect of increasing mobility is saturated due to structural deterioration. The segregation of the second (apparently, wurtzite) phase is revealed; this process, as well as the formation of other defects in the nanoheterostructure layers, is due to local strains caused by variations of the indium content in the layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a47230fdc5aa194ea9b924de5d7ebb99 https://doi.org/10.1134/s1063774511020180 Zobrazit plný text záznamu Plný text ve formátu PDF