Hydrogen Release and Defect Formation During Heat Treatments of SiNx:H/a-Si: H Double Passivation Layer on C-SI Substrate

Autor:	A. Suphellen, Alexander Ulyashin, Arve Holt, Bengt Gunnar Svensson, A. Bentzen, D. Grambole, Anette Eleonora Gunnæs, Arne Olsen, E. Sauar, Erik Stensrud Marstein, S. Diplas
Rok vydání:	2006
Předmět:	Amorphous silicon Materials science Hydrogen Silicon Passivation Annealing (metallurgy) Metallurgy chemistry.chemical_element Carrier lifetime chemistry.chemical_compound Silicon nitride chemistry Chemical engineering Thin film
Zdroj:	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 05.-12.05.2006, Hawaii, USAIEEE Catalog Number 06CH37747C, 1-4244-0017-1, 1354-1357 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 05.-12.05.2006, Hawaii, USA
Popis:	The quality and temperature stability of surface passivation of silicon by a double layer consisting of a hydrogenated amorphous silicon thin film capped by a silicon nitride anti-reflection coating are studied. It is established that the passivation effect of the double layer can be significantly enhanced after short annealing for temperatures up to about 500degC, whereas annealing at higher temperatures results in degradation of the passivation properties. It is found that the increased effective recombination lifetime after annealing at temperatures below 500degC results from hydrogen redistribution in the interface region. Furthermore, presence of interfacial structural defects formed due to hydrogen release at temperatures around 600degC, is believed to be the cause of the lifetime decrease after heat treatments at higher temperatures
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a46f07ba0b8abb90ec9f32c8de3d87cd https://doi.org/10.1109/wcpec.2006.279682 Zobrazit plný text záznamu