Cyanoethylated pullulan as a high-k solution processable polymer gate dielectric for SWCNT TFTs
| Autor: | Shan Zou, Girjesh Dubey, Naiying Du, Patrick R. L. Malenfant, Zhao Li, Gregory P. Lopinski, Jacques Lefebvre |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Fabrication Transconductance Gate dielectric Nanotechnology 02 engineering and technology Dielectric Carbon nanotube 010402 general chemistry 01 natural sciences Capacitance law.invention Biomaterials law Materials Chemistry Electrical and Electronic Engineering Polarization (electrochemistry) carbon nanotubes business.industry printable electronics General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials thin film transistor Thin-film transistor Optoelectronics 0210 nano-technology business polymer dielectric |
| Zdroj: | Organic Electronics. 42:329-336 |
| ISSN: | 1566-1199 |
| Popis: | Cyanoethylated pullulan (CEP), a high-k solution processable polymer gate dielectric, is used to fabricate bottom gated single wall carbon nanotube (SWCNT) network thin film transistors (TFTs). Both aqueous and organic dispersions of highly semiconducting enriched SWCNTs are used as the channel material. Use of CEP as the dielectric enables fabrication of devices operating at low voltage (1 Hz) is found to significantly decrease the transconductance. This is shown to be related to a significant frequency dependence of the capacitance associated with a slow polarization response of the dielectric. Despite this limitation, CEP could be a useful dielectric in SWCNT TFTs for applications such as sensors and low frequency amplifiers. |
| Databáze: | OpenAIRE |
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