| Autor: |
F. Buchali, Werner Prost, Q. Liu, A. Lindner, A. Wiersch, F. Scheffer |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 124:475-482 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(92)90503-b |
| Popis: |
GaInP grown by LP-MOVPE is studied with emphasis on high doping behaviour. Our material exhibits a residual background concentration of ND-NA≤5×1015 cm-3. Disilane is used as a Si donor source and an activation efficiency very close to unity without any saturation effects was measured up to ND=8×1018 cm-3. Taking the 2DEG channel at the GaAs/n-GaInP heterointerface into account, a transport characterization has been performed using magnetic field dependent Hall measurements. At low temperatures a 2DEG mobility has been revealed which clearly effects the transport properties. In addition, a PL analysis on the basis of the Burstein-Moss effect is carried out in order to analyse the doping of the GaInP layer independently. Finally, optimized Ge/Ni/Au ohmic contacts to n-GaInP (RC |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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