Stress Profile Characterization And Test Structures Analysis Of Single And Double Ion Implanted LPCVD Polycrystalline Silicon

Autor:	Josep Samitier, M.S. Benrakkad, Joan Ramon Morante, M.A. Benitez, J. Esteve, Jan-Åke Schweitz
Rok vydání:	2005
Předmět:	Fabrication Materials science Silicon business.industry Annealing (metallurgy) Doping chemistry.chemical_element Chemical vapor deposition Structural engineering engineering.material Surface micromachining Polycrystalline silicon chemistry Residual stress engineering Optoelectronics business
Zdroj:	Scopus-Elsevier
DOI:	10.1109/sensor.1995.721751
Popis:	Very low stress gradient across the polysilicon layers is required for the fabrication of large micromechanical structures based oil surface micromnachining technologies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4459afc910e08637b568fa7a4de4aa1 https://doi.org/10.1109/sensor.1995.721751 Zobrazit plný text záznamu