Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule-Silicon Interface
| Autor: | Ayelet Vilan, Omer Yaffe, Han Zuilhof, David Cahen, Hagai Cohen, Antoine Kahn, Sidharam P. Pujari, Leeor Kronik, Ofer Sinai |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Bond dipole moment
40-percent nh4f flat h-si(111) surfaces energy-level alignment Molecular physics electronic-properties symbols.namesake Condensed Matter::Materials Science X-ray photoelectron spectroscopy Monolayer Work function Physical and Theoretical Chemistry VLAG Chemistry work-function Fermi level Doping Organic Chemistry self-assembled monolayers si(111) surfaces Charge density organic monolayers Organische Chemie Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dipole General Energy symbols oxide Atomic physics devices |
| Zdroj: | The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces 117 (2013) 43 The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 117(43), 22422-22427 |
| ISSN: | 1932-7447 |
| Popis: | The interface level alignment of alkyl and alkenyl monolayers, covalently bound to oxide-free Si substrates of various doping levels, is studied using X-ray photoelectron spectroscopy. Using shifts in the C 1s and Si 2p photoelectron peaks as a sensitive probe, we find that charge distribution around the covalent Si–C bond dipole changes according to the initial position of the Fermi level within the Si substrate. This shows that the interface dipole is not fixed but rather changes with the doping level. These results set limits to the applicability of simple models to describe level alignment at interfaces and show that the interface bond and dipole may change according to the electrostatic potential at the interface. |
| Databáze: | OpenAIRE |
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