Ion beam synthesis and characterization of Ge nanoparticles in SiO2

Autor:	P. Dubček, Uğur Serincan, Zdravko Siketić, Maja Buljan, I. Bogdanović Radović, Rasit Turan, U. V. Desnica, Sigrid Bernstorff
Rok vydání:	2006
Předmět:	Nuclear and High Energy Physics Materials science Ion beam mixing Ion beam Scattering Annealing (metallurgy) Quantum dot ion beam mixing RBS GISAXS XRD nanocrystals Ge implantation Analytical chemistry Grazing-incidence small-angle scattering Atmospheric temperature range Instrumentation Ion
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:843-846
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2006.03.151
Popis:	Ge quantum dots embedded in SiO 2 have been obtained by implantation of Ge ions in the 10 16 –10 17 cm −2 dose range, followed by post-implantation annealing in the temperature range T a = 300−1000 °C. Using Rutherford back-scattering, grazing incidence X-ray diffraction and grazing incidence small angle X-ray scattering it was found that Ge-QDs are synthesized as discrete, spherical QDs, with radius ranging from 1.7 to 10 nm, depending on dose and T a . For T a above 800 °C the Ge atom diffusion becomes considerable, leading to a strong increase of both size and size distribution of Ge QDs, but still without sizeable loss of Ge atoms from the implanted layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a429bbb5341fb35d49f0c42f1a9403d6 https://doi.org/10.1016/j.nimb.2006.03.151 Zobrazit plný text záznamu Full Text from ScienceDirect