Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser
| Autor: | Junichi Kaneko, Kiichi Meguro, Tokuyuki Teraji, Fumiyuki Fujita, Y. Oshiki, Takahiro Imai, A. Homma, Y. Yamamoto, Teruko Sawamura, K. Tsuji, Michihiro Furusaka |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Drift velocity
Coaxial cable CVD diamond engineering.material law.invention Optics Parasitic capacitance law Materials Chemistry carrier drift velocity Electrical and Electronic Engineering Chemistry business.industry Mechanical Engineering Diamond General Chemistry UV pulse laser Electronic Optical and Magnetic Materials Time of flight engineering time of flight Charge carrier Field-effect transistor business Pulse-width modulation |
| Zdroj: | Diamond and Related Materials. 14(11-12):1992-1994 |
| ISSN: | 0925-9635 |
| Popis: | There are continuing efforts of developing faster FETs and diamond is one of the strong candidates as a base semiconductor. Since the upper-limit-frequency of diamond FETs determines saturated drift velocities of charge-carriers, we need to first characterize diamond to develop better FETs. It is, however, not easy to measure the velocities with response time of less than 20 ns. Therefore, we developed a drift velocity measurement system using a time-of-flight (TOF) technique with a UV laser with 100 ps pulse width. In order to realize response times faster than 20 ns, we employed a 50 Ω coaxial cable as a load, with which we could effectively reduce the stray capacitance and inductance, and also, suppress reflections in the signal which gives false signals. As a result, we can measure carrier-transit times shorter than 10 ns. http://www.sciencedirect.com/science/journal/09259635 |
| Databáze: | OpenAIRE |
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